Product Summary

The BC637 is a 60V NPN Epitaxial Silicon Transistor. The applications of it are Switching and Amplifier Applications.

Parametrics

BC637 absolute maximum ratings: (1)Emitter-Base Voltage:5 V; (2)Collector Current:1 A; (3)Peak Collector Current:1.5 A; (4)Base Current:100 mA; (5)Collector Power Dissipation:1 W; (6)Junction Temperature:150℃; (7)Storage Temperature:-65 to 150℃; (8)Collector-Emitter Voltage:60V.

Features

BC637 feature: (1)Complement to BC636/638/640.

Diagrams

BC637 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BC637_D26Z
BC637_D26Z

Fairchild Semiconductor

Transistors Bipolar (BJT) TO-92 NPN GP AMP

Data Sheet

Negotiable 
BC637_D27Z
BC637_D27Z

Fairchild Semiconductor

Transistors Bipolar (BJT) TO-92 NPN GP AMP

Data Sheet

Negotiable 
BC637-10
BC637-10

Other


Data Sheet

Negotiable 
BC637-16
BC637-16

Other


Data Sheet

Negotiable 
BC637-6
BC637-6

Other


Data Sheet

Negotiable 
BC637BU
BC637BU

Fairchild Semiconductor

Transistors Bipolar (BJT) TO-92 NPN GP AMP

Data Sheet

Negotiable 
BC637G
BC637G

ON Semiconductor

Transistors Bipolar (BJT) 500mA 60V NPN

Data Sheet

0-1: $0.29
1-25: $0.14
25-100: $0.10
100-500: $0.08
BC637RL1G
BC637RL1G

ON Semiconductor

Transistors Bipolar (BJT) SS T092 HC XSTR NPN 60V

Data Sheet

0-1: $0.29
1-25: $0.14
25-100: $0.10
100-250: $0.09